SATO Motoyuki | Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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- Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Companyの論文著者
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company | 論文
- Ultrashallow Junction Formation for Sub-100nm Complementary Metal-Oxide-Semiconductor Field-Effect Transistor by Controlling Transient Enhanced Diffusion
- 10-15nm Ultrashallow Junction Formation by Flash-Lamp Annealing
- Surface Channel Metal Gate Complementary MOS with Light Counter Doping and Single Work Function Gate Electrode
- Systematic Investigation of Leakage Suppression by Pre-Silicide Implantation for CoSi2 Formation on Shallow n+/p Si Diodes
- Flash Lamp Anneal Technology for Effectively Activating Ion Implanted Si