TSAI Yan-Ying | Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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- Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung Universityの論文著者
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University | 論文
- Temperature-Dependent Characteristics of an Sulfur-Passivated AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT)
- DC Characterization of InP/InGaAs Tunneling Emitter Bipolar Transistor
- A New Camel-Gate Field Effect Transistor with a Composite Channel Structure
- On the Emitter Ledge Length Effect for InGaP/GaAs Heterojunction Bipolar Transistors
- Characteristics of a New Resistive-Type Hydrogen Sensor