Ao Jin-Ping | Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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- Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japanの論文著者
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan | 論文
- Schottky barrier height determination by capacitance-voltage measurement on n-GaN with exponential doping profile
- Effect of GaNP buffer layer on AlGaN epilayers deposited on (0001) sapphire substrates by metalorganic chemical vapor deposition
- Al0.17Ga0.83N film using middle-temperature intermediate layer grown on (0001) sapphire substrate by metal-organic chemical vapor deposition
- Growth of AlN and GaN by metalorganic chemical vapor deposition on BP synthesized by flux method
- AlGaN/GaN high electron mobility transistor with thin buffer layers