Hane Masami | Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
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- Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japanの論文著者
Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan | 論文
- Effects of Si/Ni Composition Ratio of NixSiy Gate Electrode and Hf/Si Composition Ratio of Hf-Based High-$k$ Insulator on Threshold Voltage Controllability and Mobility of Metal–Oxide–Semiconductor Field-Effect Transistors
- Physical Model for Reset State of Ta2O5/TiO2-Stacked Resistance Random Access Memory
- Magnetic Properties and Writing Characteristics of Magnetic Clad Lines in Magnetoresistive Random Access Memory Devices
- Porous Low-$k$ Impacts on Performance of Advanced LSI Devices with GHz Operations
- Impact of Barrier Metal Sputtering on Low-k SiOCH Films with Various Chemical Structures