Ryoo Kyung-Chang | Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Korea
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- 同名の論文著者
- Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Koreaの論文著者
Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Korea | 論文
- Novel Gate-All-Around Metal–Oxide–Semiconductor Field Effect Transistors with Self-Aligned Structure
- Fin and Recess-Channel Metal Oxide Semiconductor Field Effect Transistor for Sub-50 nm Dynamic Random Access Memory Cell
- Self-Aligned Dual-Gate Single-Electron Transistors
- Room-Temperature Operation of a Single-Electron Transistor Made by Oxidation Process Using the Recessed Channel Structure
- Dual Gate Single-Electron Transistors with a Recessed Channel and Underlapped Source/Drain Structure