Lucovsky Gerald | Department Of Physics Materials Science And Engineering And Electrical And Computer Engineering Nort
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- 同名の論文著者
- Department Of Physics Materials Science And Engineering And Electrical And Computer Engineering Nortの論文著者
Department Of Physics Materials Science And Engineering And Electrical And Computer Engineering Nort | 論文
- Chemical Bonding at Interfaces between Si (100) and High-K Dielectrics : Competing Effects of i) Process Gas-Substrate and ii) Film Deposition Reactions
- A Unified Chemical Bonding Model for Defect Generation in a-SiH: Photo-Induced Defects in Photovoltaic Devices and Current-Induced Defects in TFTs.
- Characterization of the Interface between Plasma-Oxidized SiO_2 and Crystalline Silicon by Cathodoluminescence Spectroscopy (CLS)
- Monolayer Nitrogen-Atom Distributions in Ultrathin Gate Dielectrics by Low-Temperature Low-Thermal-Budget Processing
- Integration of Plasma-Assisted and Rapid Thermal Processing for Low-Thermal Budget Preparation of Ultra-Thin Dielectrics for Stacked-Gate Device Structures