Mishima Yasuyoshi | Advanced Cmos Labolatories Fujitsu Laboratories Ltd.
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概要
関連著者
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Mishima Yasuyoshi
Advanced Cmos Labolatories Fujitsu Laboratories Ltd.
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Shido Hideharu
Advanced Cmos Labolatories Fujitsu Laboratories Ltd.
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Fukuda Masatoshi
Advanced Cmos Labolatories Fujitsu Laboratories Ltd.
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Kotani K
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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Kotani K
Tohoku Univ. Sendai‐shi Jpn
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MISHIMA Yasuyoshi
Fujitsu Laboratories Ltd.
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Zhu Xiaoli
Tohoku University
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FUKUDA Masatoshi
Fujitsu Laboratories Ltd.
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SHIDO Hideharu
Fujitsu Laboratories Ltd.
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Mishima Yasuyoshi
Advanced CMOS Development Department, Fujitsu Laboratories Ltd., 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Kotani Koji
Graduate School Of Engineering Tohoku University
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Kotani Koji
Tohoku Univ. Sendai‐shi Jpn
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ITO Takashi
Graduate School of Engineering, Tohoku University
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KUROKI Shin-Ichiro
Tohoku University
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ITO Takashi
Tohoku University
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ZHU Xiaoli
Graduate School of Engineering, Tohoku University
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KUROKI Shin-Ichiro
Graduate School of Engineering, Tohoku University
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Shido Hideharu
Advanced CMOS Labolatories, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 24
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Fukuda Masatoshi
Advanced CMOS Labolatories, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 24
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KUDO Hiroshi
Advanced Science Research Center, Japan Atomic Energy Research Institute
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Ishikawa Kenji
Advanced CMOS Development Department, Fujitsu Laboratories Ltd., 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Satou Shigeru
Advanced CMOS Development Department, Fujitsu Laboratories Ltd., 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Kihara Fukuji
MCU Technology Department, Fujitsu Ltd., 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Okamato Masayuki
MCU Technology Department, Fujitsu Ltd., 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Ito Tetsuya
Integration Department, Fujitsu Ltd., 1500 Mizono, Tado, Kuwana-gun, Mie 511-0192, Japan
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Suzuki Yoshiyuki
Integration Department, Fujitsu Ltd., 1500 Mizono, Tado, Kuwana-gun, Mie 511-0192, Japan
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Nomura Toshio
Integration Department, Fujitsu Ltd., 1500 Mizono, Tado, Kuwana-gun, Mie 511-0192, Japan
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Kawano Michiari
Integration Department, Fujitsu Ltd., 1500 Mizono, Tado, Kuwana-gun, Mie 511-0192, Japan
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Nishikawa Katsunari
Process Engineering Department, Fujitsu Ltd., 1500 Mizono, Tado, Kuwana-gun, Mie 511-0192, Japan
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Ozaki Yoshihiro
Product Engineering Department, Fujitsu Ltd., 1500 Mizono, Tado, Kuwana-gun, Mie 511-0192, Japan
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Kudo Hiroshi
Advanced CMOS Development Department, Fujitsu Laboratories Ltd., 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0197, Japan
著作論文
- The Drivability Enhancement Mechanisms in Nano-grating MOSFETs
- Characteristics of Nano-Grating N-Channel MOSFETs for Improved Current Drivability(Semiconductor Materials and Devices)
- Influence on Hole and Electron Mobilities of Using a Multi-Wall Structural Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- Efficient Reduction of Standby Leakage Current in LSIs for Use in Mobile Devices