Influence on Hole and Electron Mobilities of Using a Multi-Wall Structural Channel Metal–Oxide–Semiconductor Field-Effect Transistors

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概要

• 論文の詳細を見る

• We investigated the influence on hole and electron mobilities of metal–oxide–semiconductors field-effect transistors with a multi-wall channel structure. Though electron mobilities are decreased, using a multi-wall channel structure enhances hole mobilities. We prepared samples with various wall-heights, widths and wall-pitches. The multi-wall channel structure produces a (110) surface channel and a strain produced by polycrystalline silicon gates. These enhance the hole mobility. The degree of hole mobility enhancement depends on the wall-height and wall-pitches. We also investigated the influence of bi-axial strain in the substrate on the multi-wall structure by using strained-Si substrate.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-03-15

著者

• Mishima Yasuyoshi

  Advanced Cmos Labolatories Fujitsu Laboratories Ltd.

• Shido Hideharu

  Advanced CMOS Labolatories, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 24

• Fukuda Masatoshi

  Advanced CMOS Labolatories, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 24

• Shido Hideharu

  Advanced Cmos Labolatories Fujitsu Laboratories Ltd.

• Fukuda Masatoshi

  Advanced Cmos Labolatories Fujitsu Laboratories Ltd.

• Mishima Yasuyoshi

  Advanced CMOS Development Department, Fujitsu Laboratories Ltd., 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0197, Japan

関連論文

• The Drivability Enhancement Mechanisms in Nano-grating MOSFETs
• Characteristics of Nano-Grating N-Channel MOSFETs for Improved Current Drivability(Semiconductor Materials and Devices)
• Influence on Hole and Electron Mobilities of Using a Multi-Wall Structural Channel Metal–Oxide–Semiconductor Field-Effect Transistors
• Efficient Reduction of Standby Leakage Current in LSIs for Use in Mobile Devices

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