Yamaguchi H | Ulsi Device Development Laboratory Nec Corporation
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概要
Ulsi Device Development Laboratory Nec Corporation | 論文
- A New Post-Metal Threshold Voltage Adjustment Scheme by Hydrogen Ion Implantation
- Charge-Free and Dopant Dependence-Free Etching Processes Using Non-Maxwellian Electron Energy Distributions in Ultra-High-Frequency Plasma
- Influence of Gate Oxide Quality on Plasma Process-Induced Damage in Ultra Thin Gate Oxide
- Low Temperature Recovery of Ru(Ba, Sr)TiO_3/Ru Capacitors Degraded by Forming Gas Annealing
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing