TSUDA Hirotaka | Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University
スポンサーリンク
概要
- 同名の論文著者
- Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto Universityの論文著者
関連著者
-
Eriguchi Koji
Department Of Aeronautics And Astronautics Graduate School Of Engineering Kyoto University
-
TSUDA Hirotaka
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University
-
Ono Kouichi
Department Of Aeronautical Engineering Faculty Of Engineering Kyoto University
-
Takao Yoshinori
Department Of Aeronautics And Astronautics Graduate School Of Engineering Kyoto University
-
Takao Yoshinori
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Kyoto 606-8501, Japan
-
OHTA Hiroaki
Materials Department, University of California
-
Ono Kouichi
Department Of Aeronautics And Astronautics Graduate School Of Engineering Kyoto University
-
Ohta Hiroaki
Materials Department University Of California
-
Mori Masahito
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
-
Ono Kouichi
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Kyoto 606-8501, Japan
-
Tsuda Hirotaka
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Kyoto 606-8501, Japan
-
Tsuda Hirotaka
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
-
Miyata Hiroki
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Kyoto 606-8501, Japan
著作論文
- Molecular-Dynamics-Based Profile Evolution Simulation for Sub-10-nm Si Processing Technology
- Molecular Dynamics Analysis of the Formation of Surface Roughness during Si Etching in Chlorine-Based Plasmas
- Three-Dimensional Atomic-Scale Cellular Model and Feature Profile Evolution during Si Etching in Chlorine-Based Plasmas: Analysis of Profile Anomalies and Surface Roughness
- Atomic-Scale Cellular Model and Profile Simulation of Si Etching: Analysis of Profile Anomalies and Microscopic Uniformity
- Molecular-Dynamics-Based Profile Evolution Simulation for Sub-10-nm Si Processing Technology
- Modeling and Simulation of Nanoscale Surface Rippling during Plasma Etching of Si under Oblique Ion Incidence