Kim S‐t | Process Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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- 同名の論文著者
- Process Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.の論文著者
Process Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd. | 論文
- Improvement of Contact Resistance between Ru Electrode and TiN Barrier in Ru/Crystalline-Ta_2O_5/Ru Capacitor for 50nm Dynamic Random Access Memory
- Improvement of Contact Resistance of Ru electrode/TiN barrier at Ru/Crystalline-Ta_2O_5/Ru Capacitor for 50nm DRAM device
- Investigation of Ru/TiN Bottom Electrodes Prepared by Chemical Vapor Deposition
- Investigation of Ru/TiN Bottom Electrodes Prepared by Chemical Vapor Deposition
- Challenge to 0.13μm Device Patterning using KrF