Jeon H | Department Of Materials Science And Engineering Hanyang University
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Department Of Materials Science And Engineering Hanyang University | 論文
- Electrical Properties of Atomic Layer Deposited HfO_2 Gate Dielectric Film Using D_2O as Oxidant for Improved Reliability
- Work function tunability of bilayer metal gate electrode (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Work function tunability of bilayer metal gate electrode (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Electrical Properties of Atomic Layer Deposited HfO2 Gate Dielectric Film Using D2O as Oxidant for Improved Reliability
- Electrical and Structural Characteristics of High-k Gate Dielectrics with Epitaxial Si_3N_4 Interfacial Layer on Si(111)