Koyama Kuniaki | Ulsi Device Development Laboratories Nec Corporation
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概要
関連著者
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Koyama Kuniaki
Ulsi Device Development Laboratories Nec Corporation
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KODA Takao
Department of Mathematics and Physics, Faculty of Science, Japan Women's University
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MITANI Tadaoki
Department of Physical Materials Science,Japan Advanced Institute of Science and Technology
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Nakada Ichiroh
The Institute For Solid State Physics University Of Tokyo
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藤田 善弘
日本電気株式会社
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Mitani T
Japan Advanced Inst. Sci. And Technol. Ishikawa Jpn
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Mori Hideo
Department of Internal Medicine
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Koda Takao
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Koda Takao
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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YAMAMOTO Ichiro
ULSI Device Development Laboratory, NEC Corporation
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KOYAMA Kuniaki
Department of Applied Physics,Faculty of Engineering,University of Tokyo
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NAKADA Ichiro
The Institute for Solid State Physics,University of Tokyo
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Mitani Tadaoki
Department Of Applied Physics Faculty Of Engineering University Of Tokyo:institute For Molecular Sci
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Koga Takuya
Incubation Center Nec Corporation
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藤田 善弘
Nec C&cイノベーション研究所
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Yabe Yoshikazu
Silicon Systems Research Laboratories Nec Corporation
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Koyama Kuniaki
Department Of Applied Physics Faculty Of Engineering University Of Tokyo:tamagawa Plant Nippon Elect
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Koyama Kuniaki
Ulsi Device Development Laboratory Nec
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Kasai N
National Inst. Of Advanced Industrial Sci. And Technol. Tsukuba‐shi Jpn
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AIMOTO Yoshiharu
Silicon Systems Research Laboratories NEC Corporation
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KIMURA Tohru
Silicon Systems Research Laboratories NEC Corporation
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HEIUCHI Hideki
Silicon Systems Research Laboratories NEC Corporation
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NAKAZAWA Youetsu
Silicon Systems Research Laboratories NEC Corporation
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MOTOMURA Masato
Silicon Systems Research Laboratories NEC Corporation
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FUJITA Yoshihiro
Incubation Center NEC Corporation
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HAMADA Masayuki
ULSI Device Development Laboratories NEC Corporation
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TANIGAWA Takaho
ULSI Device Development Laboratories NEC Corporation
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NOBUSAWA Hajime
ULSI Device Development Laboratories NEC Corporation
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Kasai Naoki
Ulsi Device Development Division Nec Electron Devices:(present Address)semiconductor Leading Edge Te
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Hamada M
Ulsi Device Development Laboratories Nec Corporation
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Koyama K
Ulsi Device Development Laboratories Nec Corporation
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URABE Koji
ULSI Device Development Laboratories, NEC Corporation
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Urabe K
Ulsi Device Development Laboratories Nec Corporation
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Mori Hideo
Department Of Applied Physics Faculty Of Engineering University Of Tokyo:industrial Cathode Ray Tube
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Yamamoto I
Ulsi Device Development Laboratories Nec Corporation
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Yamamoto Ichiro
Ulsi Device Development Laboratories Nec Corporation
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NAKADA Ichiroh
The Institute for Solid State Physics,University of Tokyo
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KOYAMA Kuniaki
ULSI Device Development Laboratories, NEC Corporation
著作論文
- Polarized Reflectivities of (SN)_x and Brominated (SN)_x in the Synchrotron Radiation Energy Region of 1-25 eV
- Design of 1024-l/Os 3.84GB/s High Bandwidth 600mW Low Power 16Mb DRAM Macros for Parallel Image Processing RAM(Special Issue on Multimedia, Network, and DRAM LSIs)
- Effects of Field Edge Steps on Electrical Gate Linewidth Measurements (Special Issue on Microelectronic Test Structure)
- Stacked Capacitor DRAM Cell Technology