Feng W‐s | Department Of Electronic Engineering Chang Gung University
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概要
Department Of Electronic Engineering Chang Gung University | 論文
- Effects of Post CF_4 Plasma Treatment on the HfO_2 Thin Film
- Hysteresis Phenomenon Improvements of HfO_2 by CF_4 Plasma Treatment
- Current Transportation Mechanism of HfO_2 Gate Dielectrics with Silicon Surface Fluorine Implantation (SSFI) in CMOS Application
- Current Transportation Mechanism and Interface States Characterization of Sputtered Gd_2O_3 Gate Dielectrics for ULSI Application
- Characterization of Novel HfTiO Gate Dielectrics Post-treated by NH_3 Plasma and Ultra-violet Rays