Kawano Takao | Ulsi Device Development Laboratories Nec Corporation
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概要
Ulsi Device Development Laboratories Nec Corporation | 論文
- The Most Essential Factor for High-Speed, Low-Power 0.35 μm Complementary Metal-Oxide-Semiconductor Circuits Fabricated on Separation-by-Implanted-Oxygen (SIMOX) Substrates
- Front-and Back-Interface Trap Densities and Subthreshold Swings of Fully Depleted Mode Metal-Oxide-Semiconductor Transistors Fabricated on Separation-by-Implanted-Oxygen Substrates
- A 0.7-μm-Pitch Double Level Al Interconnection Technology for 1-Gbit DRAMs using SiO_2 Mask Al Etching and Plasma Enhanced Chemical Vapor Deposition SiOF
- Stability and Application to Multilevel Metallization of Fluorine-Doped Silicon Oxide by High-Density Plasma Chemical Vapor Deposition
- A Precise SOI Film Thickness Measurement Including Gate Depletion and Quantum Effects