Stability and Application to Multilevel Metallization of Fluorine-Doped Silicon Oxide by High-Density Plasma Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-03-15
著者
-
Kishimoto Koji
Ulsi Device Development Laboratories Nec Corporation
-
Huo Tai-chan
Bell Laboratories Lucent Technologies
-
Okada Norio
System Lsi Design Engineering Division Nec Corporation
-
GOMI Hideki
ULSI Device Development Laboratories, NEC Corporation
-
Gomi Hideki
Ulsi Device Development Laboratories Nec Corporation
-
KOYANAGI Ken-ichi
ULSI Device Development Laboratories, NEC Corporation
-
MATSUMOTO Akira
ULSI Device Development Laboratories, NEC Corporation
-
SUMIHIRO Naotaka
System LSI Design Engineering Division, NEC Corporation
-
Sumihiro Naotaka
System Lsi Design Engineering Division Nec Corporation
-
Koyanagi Ken-ichi
Ulsi Device Development Laboratories Nec Corporation
-
Matsumoto Akira
Ulsi Device Development Laboratories Nec Corporation
関連論文
- A 0.7-μm-Pitch Double Level Al Interconnection Technology for 1-Gbit DRAMs using SiO_2 Mask Al Etching and Plasma Enhanced Chemical Vapor Deposition SiOF
- Stability and Application to Multilevel Metallization of Fluorine-Doped Silicon Oxide by High-Density Plasma Chemical Vapor Deposition