Igarashi Hitoshi | Fundamental Research Laboratories
スポンサーリンク
概要
Fundamental Research Laboratories | 論文
- Growth of InN by Chloride-Transport Vapor Phase Epitaxy
- Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy
- MOCVD GaAlAs Hetero-Buffer GaAs Low-Noise MESFETs : B-5: GaAs IC
- GaAs Atomic Layer Epitaxy by Hydride VPE
- Selective Silicon Epitaxy Using Reduced Pressure Technique