Lan Sheng | Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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- Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japanの論文著者
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan | 論文
- Room-Temperature 1.6 μm Electroluminescence from $p^{+}$-Si/$\beta$-FeSi2/$n^{+}$-Si Diodes on Si(001) without High-Temperature Annealing
- Improved Room-Temperature 1.6 μm Electroluminescence from $p$-Si/$\beta$-FeSi2/$n$-Si Double Heterostructures Light-Emitting Diodes
- Improvement of Dielectric Properties on Deposited SiO2 Caused by Stress Relaxation with Thermal Annealing
- Impact of Residual Impurities on Annealing Properties of Vacancies in Electroplated Cu Studied Using Monoenergetic Positron Beams
- Characterization of Low-$k$/Cu Damascene Structures Using Monoenergetic Positron Beams