M. Nishiura | Graduate School of Frontier Science The Univ. Of Tokyo
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概要
Graduate School of Frontier Science The Univ. Of Tokyo | 論文
- Examination of the Universality of Hole Mobility in Strained-Si p-MOSFETs
- Comparative Study on Influence of Subband Structures on Electrical Characteristics of III-V Semiconductor, Ge and Si Channel n-MISFETs
- Fabrication of 3-5 on insulator structures on Si using microchannel epitaxy with a two-step growth technique
- Fabrication of III-V-O-I (III-V on Insulator) structures on Si using micro-channel epitaxy with a two-step growth technique
- Fabrication of SiO_2/Ge MIS structures by plasma oxidation of ultrathin Si films grown on Ge