Asakawa Koji | Materials and Devices Research Laboratories, Toshiba Corporation

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Materials and Devices Research Laboratories, Toshiba Corporation | 論文

• Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment
• Surface Preparation Effects for Molecular Beam Epitaxial Growth of ZnSe Layers on InGaP Layers
• Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment
• Enhancement of Nitrogen Incorporation in ZnSe Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy
• Current-Voltage Characteristics of p-p Isotype InGaAlP/GaAs Heterojunction with a Large Valence-Band Discontinuity

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