Asahi Hajime | NTT Electrical Communications Laboratories
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概要
NTT Electrical Communications Laboratories | 論文
- MBE Growth of Ga_In_xAs Alloy on Si Substrate
- An In-Doped Dislocation-Free GaAs Layer Grown by MBE on In-Doped GaAs Substrate
- Rare Earth Impurity Analysis for Fluoride Glass Optical Fiber by Photoluminescence Measurement
- High Threshold Voltage Reproducibility for WSi/Al_xGa_As/GaAs MIS-Like Heterostructure FET
- Nanometer Patterning by Focused Low Energy Electron Beam Lithography