Nanometer Patterning by Focused Low Energy Electron Beam Lithography

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概要

• 論文の詳細を見る

• Focused low energy electron beam was applied for nanometerscale pattern delineation. A resist exposure with an electron energy less than 10 kV causes two problems, that is, a limited penetration depth and the scum formation due to charging-up effect. These problems were solved by using an electrically conducting 2-layer resist system composed of thin top imaging layer of silicone containing resist and conducting CVD carbon film as a bottom resist. Nanometer patterning as fine as 40 nm can be delineated by very low energy electron exposure with no electron energy dissipation in a substrate layer.

• 社団法人応用物理学会の論文
• 1987-07-20

著者

• Kakuchi Masami

  Ntt Electrical Communications Laboratories

• Sugita A

  Ntt Electrical Communications Laboratories

• Sugita Akio

  Ntt Electrical Communications Laboratories

• Tamamura Toshiaki

  Ntt Electrical Communications Laboratories

関連論文

• Photonic Band Gap in Anodic Porous Alumina with Extremely High Aspect Ratio Formed in Phosphoric Acid Solution
• Ideally Ordered Anodic Porous Alumina Mask Prepared by Imprinting of Vacuum-Evaporated Al on Si : Instrumentation, Measurement, and Fabrication Technology
• Nanometer Patterning by Focused Low Energy Electron Beam Lithography

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