Nakase Makoto | Materials and Devices Research Laboratories, Toshiba Corporation
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概要
Materials and Devices Research Laboratories, Toshiba Corporation | 論文
- Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment
- Surface Preparation Effects for Molecular Beam Epitaxial Growth of ZnSe Layers on InGaP Layers
- Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment
- Enhancement of Nitrogen Incorporation in ZnSe Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy
- Current-Voltage Characteristics of p-p Isotype InGaAlP/GaAs Heterojunction with a Large Valence-Band Discontinuity