Yokota Kazuaki | High-Technology Research Center and Faculty of Engineering, Kansai University
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概要
High-Technology Research Center and Faculty of Engineering, Kansai University | 論文
- Simulation Models for Silicon-on Insulator Tunneling-Barrie-Junction Metal-Oxide-Semiconductor Field-Effect Transistor and Performance Perspective
- Simulation Models for Silicon-on-Insulator Tunneling-Barrier-Junction Metal-Oxide-Semiconductor Field-Effect Transistor and Performance Perspective
- Estimation of Epitaxial Temperature Using X-Ray Diffraction for Si Films Grown on (100) Si by Molecular Beam Epitaxy
- X-Ray Diffraction from Low-Temperature-Grown Silicon Films with Small Surface Roughness
- Lowering of Silicon Surface Cleaning Temperature by Irradiating Low Energy Electron Beams