Khan Aurangzeb | Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
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- Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japanの論文著者
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan | 論文
- Theoretical Optimization of Base Doping Concentration for Radiation Resistance of InGaP Subcells of InGaP/GaAs/Ge Based on Minority-Carrier Lifetime
- Numerical Analysis for Radiation Resistant InGaP Solar Cell
- Effect of Base Doping Concentration on Radiation-Resistance for GaAs Sub-Cells in InGaP/GaAs/Ge
- Observation of In-Plane Asymmetric Strain Relaxation during Crystal Growth and Growth Interruption in InGaAs/GaAs(001)
- Wide-Angle Antireflection Effect of Subwavelength Structures for Solar Cells