Okumura Katsuya | Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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- 同名の論文著者
- Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japanの論文著者
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan | 論文
- Surface Channel Metal Gate Complementary MOS with Light Counter Doping and Single Work Function Gate Electrode
- Novel Pb(Ti,Zr)O_3(PZT) Crystallization Technique Using Flash Lamp for Ferroelectric RAM (FeRAM) Embedded LSIs and One Transistor Type FeRAM Devices
- Novel PZT Crystallization Technique by Using Flash Lamp for FeRAM Embedded LSIs and 1Tr FeRAM Devices
- 10-15nm Ultrashallow Junction Formation by Flash-Lamp Annealing
- Defects Induced by Carbon Contamination in Low-Temperature Epitaxial Silicon Films Grown with Monosilane