Negishi Yoichiro | Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
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- 同名の論文著者
- Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japanの論文著者
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan | 論文
- Fabrication of p-Si/$\beta$-FeSi2/n-Si Double-Heterostructure Light-Emitting Diode by Molecular Beam Epitaxy
- Impact of Thin Island-Like BaSi2 Template on the Formation of n+-BaSi2/p+-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy
- Epitaxial Growth and Photoresponse Properties of BaSi2 Layers toward Si-Based High-Efficiency Solar Cells
- Epitaxial Growth of Semiconducting BaSi2 Films on Si(111) Substrates by Molecular Beam Epitaxy
- Time-Resolved Photoluminescence Study of Si/$\beta$-FeSi2/Si Structures Grown by Molecular Beam Epitaxy