廣畑 賢治 | Research and Development Center, Toshiba Corp.
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Research and Development Center, Toshiba Corp. | 論文
- Single 3-V Supply Operation GaAs Linear Power MESFET Amplifier for 5.8-GHz ISM Band Applications (Special Issue on Microwave and Millimeter Wave Technology)
- Single Low 2.4-V Supply Operation GaAs Power MESFET Amplifier with Low-Distortion Gain-Variable Attenuator for 1.9-GHz PHS Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
- Nonlinear Conductivity Due to Field-Induced Depinning of Charge-Density Waves in NbSe_3
- Refractory WN_x/W Self-Aligned Gate GaAs Power Metal-Semiconductor Field-Effect Transistor for 1.9-GHz Digital Mobile Communication System Operating with a Single Low-Voltage Supply
- A Self-Aligned Gate AlGaAs/GaAs Heterostructure Field-Effect Transistor with an Ion-Implanted Buried-Channel for use in High Efficiency Power Amplifiers