INOUE Satoshi | Base Technology Research Center, Seiko Epson Corporation
スポンサーリンク
概要
Base Technology Research Center, Seiko Epson Corporation | 論文
- Extraction of Trap State at the Oxide-Silicon Interface and Grain Biundary in Polycrystallune Silicon Thin-Film Transistors
- Device Simulation of Grain Boundaries in Lightly Doped Polysilicon Films and Analysis of Dependence on Defect Density
- Extraction of Trap States at the Oxide-Silicon Interface and Grain Boundary for Polycrystalline Silicon Thin-Film Transistors : Semiconductors
- Current Density Enhancement at Active Layer Edges in Polycrystalline Silicon Thin-Film Transistors : Semiconductors
- Device Simulation of Carrier Transport through Grain Boundaries in Lightly Doped Polysilicon Films and Dependence on Dopant Density : Semiconductors