In Situ High-Resolution Transmission Electron Microscopy Observation of Solid-Liquid Interface of Boron-Doped Silicon

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-05-15

著者

• OSHIMA Ryuichiro

  Research Institute for Advanced Science & Technology, Osaka Prefecture University

• Hori Fuminobu

  Research Institute For Advanced Science And Technology Osaka Prefecture University

• NISHIZAWA Hirosato

  Research Institute for Advanced Science and Technology, Osaka Prefecture University

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• In Situ High-Resolution Transmission Electron Microscopy Observation of Solid-Liquid Interface of Boron-Doped Silicon
• Formation of Stacking Fault Tetrahedra in Silicon Rapidly Solidified from Melt
• In Situ High-Resolution Transmission Electron Microscopy Observation of Solid-Liquid Interface of Boron-Doped Silicon
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