In Situ High-Resolution Transmission Electron Microscopy Observation of Solid-Liquid Interface of Boron-Doped Silicon

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概要

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• Atomic behavior in the solid-liquid interface of boron-doped silicon has been examined by in-situ high-resolution transmission electron microscopy (HRTEM). We have successfully obtained the experimental observations of solid-liquid interface structures. We performed a structure analysis of a transition phase in solid-liquid interfaces by fast Fourier transformation (FFT) analysis, and obtained image simulations based on molecular dynamics (MD) calculations. We also observed reduction in lattice plane spacings and introduction of point defect clusters at the interfaces.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-05-15

著者

• OSHIMA Ryuichiro

  Research Institute for Advanced Science & Technology, Osaka Prefecture University

• Hori Fuminobu

  Research Institute For Advanced Science And Technology Osaka Prefecture University

• NISHIZAWA Hirosato

  Research Institute for Advanced Science and Technology, Osaka Prefecture University

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