Molybdenum Gate Work Function Engineering for Ultra-Thin-Body Silicon-on-Insulator (UTB SOI) MOSFETs
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-30
著者
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Ha Daewon
University Of California At Berkeley Department Of Electrical Engineering And Computer Science
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Hu Chenming
University Of California At Berkeley Department Of Electrical Engineering And Computer Science
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Hu Chenming
University Of California At Berkeley
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Choi Yang-kyu
University Of California At Berkeley Department Of Electrical Engineering And Computer Science
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RANADE Pushkar
Department of Materials Science and Engineering
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LEE Jeong-Soo
University of California at Berkeley, Department of Electrical Engineering and Computer Science
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KING Tsu-Jae
University of California at Berkeley, Department of Electrical Engineering and Computer Science
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King Tsu-jae
University Of California At Berkeley Department Of Electrical Engineering And Computer Science
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Lee Jeong-soo
University Of California At Berkeley Department Of Electrical Engineering And Computer Science
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Panade Pushkar
Department of Materials Science and Engineering
関連論文
- Investigation of Gate-Induced Drain Leakage (GIDL) Current in Thin Body Devices: Single-Gate Ultra-Thin Body, Symmetrical Double-Gate, and Asymmetrical Double-Gate MOSFETs
- Molybdenum Gate Work Function Engineering for Ultra-Thin-Body Silicon-on-Insulator (UTB SOI) MOSFETs
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- Simulation of 2-Dimensional Hole Gas for PMOS Devices with Phosphorus Pile-Up
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- Molybdenum Gate Work Function Engineering for Ultra-Thin-Body Silicon-on-Insulator (UTB SOI) MOSFETs