Molybdenum Gate Work Function Engineering for Ultra-Thin-Body Silicon-on-Insulator (UTB SOI) MOSFETs

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概要

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• In this paper, we demonstrate threshold voltage ($V_{\text{T}}$) adjustment for Mo-gated ultra-thin-body (UTB) silicon-on-insulator (SOI) MOSFETs by nitrogen (14N+) implantation for the first time. In order to avoid dopant fluctuation effects and impurity scattering, a lightly doped ($10^{15}$ cm-3) Si body is used without degrading the short channel effects by virtue of an ultra-thin body. Metallic gate materials are desirable for reducing resistance, and for eliminating the gate depletion effect as well as dopant penetration through an ultra-thin gate dielectric. The $V_{\text{T}}$ for Mo-gated UTB SOI p-channel MOSFET is $-0.2$ V, and it can be shifted by approximately $-65$ mV for every $1\times 10^{15}$ cm-2 increment in 14N+ implant dose. An estimated dose of $6--8\times 10^{15}$ cm-2 is needed for achieving low $V_{\text{T}}$ (0.2–0.3 V) Mo-gated UTB SOI n-channel MOSFET.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2003-04-15

著者

• Ha Daewon

  University Of California At Berkeley Department Of Electrical Engineering And Computer Science

• Hu Chenming

  University Of California At Berkeley

• Choi Yang-kyu

  University Of California At Berkeley Department Of Electrical Engineering And Computer Science

• RANADE Pushkar

  Department of Materials Science and Engineering

• King Tsu-jae

  University Of California At Berkeley Department Of Electrical Engineering And Computer Science

• Lee Jeong-soo

  University Of California At Berkeley Department Of Electrical Engineering And Computer Science

• Lee Jeong-Soo

  University of California at Berkeley, Department of Electrical Engineering and Computer Science, 373 Cory Hall, University of California, Berkeley, CA 94720, U.S.A.

• King Tsu-Jae

  University of California at Berkeley, Department of Electrical Engineering and Computer Science, 373 Cory Hall, University of California, Berkeley, CA 94720, U.S.A.

• Ha Daewon

  University of California at Berkeley, Department of Electrical Engineering and Computer Science, 373 Cory Hall, University of California, Berkeley, CA 94720, U.S.A.

関連論文

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• Molybdenum Gate Work Function Engineering for Ultra-Thin-Body Silicon-on-Insulator (UTB SOI) MOSFETs
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• Molybdenum Gate Work Function Engineering for Ultra-Thin-Body Silicon-on-Insulator (UTB SOI) MOSFETs

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