Evolution of Electrical Properties of Magnetic Tunnel Junction through Successive Dielectric Breakdowns
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-03-15
著者
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Kim Seongsoo
School Of Physics & Center For Strongly Correlated Materials Research Seoul Narional University
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KIM Daeshik
School of Physics & Center for Strongly Correlated Materials Research, Seoul Narional University
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KIM Tesu
School of Physics & Center for Strongly Correlated Materials Research, Seoul Narional University
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KONG Jun
School of Physics & Center for Strongly Correlated Materials Research, Seoul Narional University
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YU Yuyeon
School of Physics & Center for Strongly Correlated Materials Research, Seoul Narional University
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CHAR Kookrin
School of Physics & Center for Strongly Correlated Materials Research, Seoul Narional University
関連論文
- Evolution of Electrical Properties of Magnetic Tunnel Junction through Successive Dielectric Breakdowns
- Dielectric Morphology of Twin Domains in LaAIO_3 Observed by a Scanning Microwave Microscope : Electrical Properties of Condonsed Matter
- Evolution of Electrical Properties of Magnetic Tunnel Junction through Successive Dielectric Breakdowns