Evolution of Electrical Properties of Magnetic Tunnel Junction through Successive Dielectric Breakdowns

概要

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We have fabricated a cross-strip-type Ni81Fe19/Co60Fe40/AlOX/Co60Fe40 magnetic tunnel junction (MTJ) and examined the changes of electrical properties through successive dielectric breakdowns. As the successive breakdowns progressed, both junction resistance and tunneling magnetoresistance (TMR) decreased and the temperature dependence of the junction resistance ($R$–$T$) shifted from insulating to metal-like behavior. These results can be explained by formation of increasingly conducting but nonmagnetoresistive channels in the barrier. These electrical properties after breakdowns can be described quantitatively with a parallel circuit model.
2003-03-15