Normally-Off AlGaN/GaN High Electron Mobility Transistors with Thin and High Al Composition Barrier Layers
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概要
著者
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Zhang Kai
State Key Lab On Microwave And Digital Communications Department Of Electronic Engineering Tsinghua
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Hao Yue
State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Ma Xiaohua
State Key Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Mi Minhan
State Key Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Cao Mengyi
State Key Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Chen Yonghe
State Key Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Zhang Jincheng
State Key Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Wang Chong
State Key Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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- Normally-Off AlGaN/GaN High Electron Mobility Transistors with Thin and High Al Composition Barrier Layers