Uniaxially Strained Silicon on Insulator with Wafer Level Prepared by Mechanical Bending and Annealing

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概要

• 論文の詳細を見る

• This paper presents the fabrication of uniaxially strained silicon on insulator (SOI) with wafer level prepared by mechanical bending and annealing using a low-cost and simple process. It is found that the strain of the top silicon layer was caused by plastic deformation of the intermediate silicon dioxide layer. Both compressive and tensile strains can be obtained by this process, which is suitable for SOI wafers of different sizes. Micro-Raman measurements showed the top silicon layer with 0.1664% compressive uniaxial strain and 0.077% tensile uniaxial strain.

• 2013-08-25

著者

• Hao Yue

  State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China

• Dai XianYing

  State Key Discipline Laboratory of Wide-Bandgap Semiconductor Technologies, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China

• Shao ChenFeng

  State Key Discipline Laboratory of Wide-Bandgap Semiconductor Technologies, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China

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• Normally-Off AlGaN/GaN High Electron Mobility Transistors with Thin and High Al Composition Barrier Layers
• Uniaxially Strained Silicon on Insulator with Wafer Level Prepared by Mechanical Bending and Annealing
• Normally-Off AlGaN/GaN High Electron Mobility Transistors with Thin and High Al Composition Barrier Layers

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