Normally-Off AlGaN/GaN High Electron Mobility Transistors with Thin and High Al Composition Barrier Layers
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概要
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A GaN-based enhancement-mode high electron mobility transistor (HEMT) with a 1.5 nm GaN/9 nm Al<inf>0.65</inf>Ga<inf>0.35</inf>N thin barrier was reported. Without any treatment on barrier layer under the gate, the as-grown HEMTs exhibited a threshold voltage of 0.3 V, a maximum drain current density of 441 mA/mm at V_{\text{GS}} = 3 V and a peak extrinsic transconductance of 204 mS/mm at V_{\text{GS}} = 1.1 V. At the same time, both a low Schottky leakage current and an insignificant surface defects induced current dispersion were observed. Moreover, drain induction barrier lower (DIBL) effect was determined to be merely 3.28 mV/V at 1 mA/mm for a gate length of 0.5 μm. Additionally, post-gate annealing experiment at step temperatures up to 450 °C was implemented, only causing a minor shift in threshold voltage. These results demonstrated the substantial potential of thin and high Al composition barrier layers for high-voltage and highly reliable enhancement mode operation.
- 2013-11-25
著者
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Zhang Kai
State Key Lab On Microwave And Digital Communications Department Of Electronic Engineering Tsinghua
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Hao Yue
State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Ma Xiaohua
State Key Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Mi Minhan
State Key Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Chen Yonghe
State Key Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Cao Mengyi
State Key Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Wang Chong
State Key Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Zhang Jincheng
State Key Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Mi Minhan
State Key Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Cao Mengyi
State Key Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Chen Yonghe
State Key Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Zhang Jincheng
State Key Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Zhang Kai
State Key Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Wang Chong
State Key Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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