Improvement of (11\bar{2}2) Semipolar GaN Crystal Quality with TiN Interlayer by Metal Organic Vapor Phase Epitaxy
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概要
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The effect of a TiN interlayer on the crystalline quality of (11\bar{2}2) semipolar GaN grown on m-plane sapphire was studied by high-resolution X-ray diffraction (HRXRD). Before GaN growth, a TiN interlayer was formed by nitrided the Ti metal on the GaN seed layer. Symmetric and skew-symmetric HRXRD measurements demonstrate that both threading dislocation and basal plane stacking fault densities are reduced. Raman results also show an increased crystalline quality and a decreased threading dislocation density. (11\bar{2}2) semipolar GaN with an optimal Ti thickness of 2 nm has been obtained under the existing growth conditions.
- 2011-11-25
著者
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Zhang Jin
State Key Laboratory Of Lithospheric Evolution Institute Of Geology And Geophysics Chinese Academy O
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Ma Jun
State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Yang Lin
State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Lin Zhi
State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Xue Xiao
State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Xu Sheng
State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Hao Yue
State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Xue Jun
State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Liu Zi
State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Li Pei
School of Technical Physics, Xidian University, Xi'an 710071, China
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Li Jian
Zoomview Optoelectronic, Co., Ltd., Xi'an 710065, China
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He Qiang
School of Technical Physics, Xidian University, Xi'an 710071, China
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Li Pei
School of Technical Physics, Xidian University, Xi'an 710071, China
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Liu Zi
State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Xue Jun
State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Hao Yue
State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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Zhang Jin
State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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He Qiang
School of Technical Physics, Xidian University, Xi'an 710071, China
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Li Jian
Zoomview Optoelectronic, Co., Ltd., Xi'an 710065, China
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Xu Sheng
State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
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