GaN-Based Vertical Cavities with All Dielectric Reflectors by Epitaxial Lateral Overgrowth (Special Issue : Recent Advances in Nitride Semiconductors)
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概要
The Japan Society of Applied Physics | 論文
- Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High-Electron-Mobility Transistor
- Formation of Several-Micrometer-Thick Polycrystalline Silicon Films on Soda Lime Glass by Flash Lamp Annealing
- Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrate
- High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition
- Low Temperature Deposition and Crystallization of Silicon Film on an HF-Etched Polycrystalline Yttria-Stabilized Zirconia Layer Rinsed with Ethanol Solution