Study on Ozonated Solution Oxidation of Phosphorus Doped Hydrogenated Amorphous Silicon Surface for Cu-Mn Alloy Based Electrodes in Thin Film Transistor

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• SUZUKI Takaaki

  Hitachi Research Laboratory of Hitachi Ltd.

• Asanuma Haruhiko

  Hitachi Research Laboratory, Hitachi, Ltd., Hitachi, Ibaraki 319-1292, Japan

• Kusunoki Toshiaki

  Hitachi Research Laboratory, Hitachi, Ltd., Hitachi, Ibaraki 319-1292, Japan

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• Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)_2 with Tetrahydrofuran Solvent
• Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(dpm)_3 Dissolved with Tetrahydrofuran Solvent : Surfaces, Interfaoes, and Films
• Study on Ozonated Solution Oxidation of Phosphorus Doped Hydrogenated Amorphous Silicon Surface for Cu-Mn Alloy Based Electrodes in Thin Film Transistor

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