Process Condition Considered Preparation and Characterization of Plasma Polymerized Methyl Methacrylate Thin Films for Organic Thin Film Transistor Application

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概要

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• Plasma polymerized methyl methaclylate (ppMMA) thin films were prepared with various process conditions such as inductively coupled plasma (ICP) power, substrate bias power, working pressure, substrate heating temperature, substrate position, and monomer flow rate. Thickness, surface morphology, dielectric constant, and leakage current of the ppMMA thin films were investigated for application to organic thin film transistor as gate dielectric. Deposition rate of over 8.6 nm/min, dielectric constant of 3.4, and leakage current density of 8.9 \times 10^{-9} A/cm-2 at electric field of 1 MV/cm were achieved for the ppMMA thin film prepared at the optimized process condition: plasma power of RF 100 W; Ar flow rate of 20 sccm; working pressure of 5 mTorr; substrate temperature of 100 °C; substrate position of 100 mm. The ppMMA thin film was then applied to pentacene based organic thin film transistor (OTFT) device fabrication. The OTFT device with 80 nm thick pentacene semiconductor layer showed field effect mobility of 0.144 cm2 V-1 s-1 and threshold voltage of -1.72 V.

• 2012-02-25

著者

• Ochiai Shizuyasu

  Department Of Electrical Engineering Aichi Institute Of Technology

• Lee Sunwoo

  Department Of Chemistry Chonnam National University

• Lee Boong-Joo

  Department of Electronic Engineering, Namseoul University, 21 Maeju-ri, Seonghwan-eup, Cheonan, Choongnam 330-707, Korea

• Lee Se-Hyun

  School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea

• Lim Young-Taek

  Department of Electrical Engineering, Inha University, Incheon 402-751, Korea

• Lim Jae-Sung

  R&D Center, HANA Micron Inc., Asan, Chungnam 336-864, Korea

• Yi Jun-Sin

  School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea

• Shin Paik-Kyun

  Department of Electrical Engineering, Inha University, Incheon 402-751, Korea

関連論文

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