Structural and electrical properties of radio frequency sputtered HfTaOx films for high-k gate insulator
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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VARMA Shikha
Institute of Physics
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MAITI Chinmay
Department of Electronics & ECE
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Hota Mrinal
Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology Kharagpur, Kharagpur 721302, India
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Mallik Sandipan
Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology Kharagpur, Kharagpur 721302, India
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Sarkar Chandan
Department of Electronics and Telecommunication Engineering, Jadavpur University, Jadavpur, Kolkata 700032, India
関連論文
- Electrical Properties of and Conduction Mechanism in Ultrathin ZrO_2 Films on Si_C_y Heterolayers
- Structural and electrical properties of radio frequency sputtered HfTaOx films for high-k gate insulator
- Electrical Properties of and Conduction Mechanism in Ultrathin ZrO2 Films on Si1-yCy Heterolayers