Electrical Properties of and Conduction Mechanism in Ultrathin ZrO2 Films on Si1-yCy Heterolayers

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Ultrathin ZrO2 films with a dielectric constant of 20 have been deposited at 150°C on carbon-implanted solid phase epitaxy (SPE)-grown Si1-yCy heterolayers by microwave plasma-enhanced chemical vapor deposition (PECVD) using zirconium tetra-tert-butoxide. The SPE-grown Si1-yCy heterolayers and deposited ZrO2 films have been analyzed by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) for chemical analysis. The fixed oxide charge density ($Q_{\text{f}}/q$) and interfacial trap density ($D_{\text{it}}$) of as-deposited ZrO2 films are found to be $2.6\times 10^{11}$ cm-2 and $5.6\times 10^{11}$ eV-1cm-2, respectively. The gate current of the ZrO2 layers is found to decrease after 400°C annealing in N2 for 30 min. The main conduction mechanism is dominated by Schottky emission in the ZrO2 films deposited on Si1-yCy layers.
2004-06-15