Electron mobility degradation and interface dipole formation in direct-contact HfO2/Si metal-oxide-semiconductor field-effect transistors

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文

著者

• Itatani Taro

  National Institute Of Advanced Industrial Science And Technology (aist)

関連論文

• High Electron Mobility Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels
• Terahertz Wave Generations from Multi-Quantum Well with Transverse Electric Field
• Electron mobility degradation and interface dipole formation in direct-contact HfO2/Si metal-oxide-semiconductor field-effect transistors
• Electron Mobility Degradation and Interface Dipole Formation in Direct-Contact HfO_2/Si Metal-Oxide-Semiconductor Field-Effect Transistors

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