Study of relationship between layer profile of SiO2 and characteristics of surface acoustic wave devices in SiO2/Al/LiTaO3 system (Special issue: Ultrasonic electronics)
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
-
Nakanishi Hidekazu
Panasonic Electronic Devices Co., Ltd., Kadoma, Osaka 571-8506, Japan
-
Goto Rei
Panasonic Electronic Devices Co., Ltd., Kadoma, Osaka 571-8506, Japan
-
Nakamura Hiroyuki
Panasonic Electronic Devices Co., Ltd., Kadoma, Osaka 571-8506, Japan
-
Iwasaki Yukio
Panasonic Electronic Devices Co., Ltd., Kadoma, Osaka 571-8506, Japan
-
Takayama Ryoichi
Panasonic Electronic Devices Co., Ltd., Kadoma, Osaka 571-8506, Japan
関連論文
- High-Electromechanical-Coupling-Coefficient Surface Acoustic Wave Resonator on Ta2O5/Al/LiNbO3 Structure
- Analysis of Rayleigh-Mode Spurious Response Using Finite Element Method/Spectrum Domain Analysis for Surface Acoustic Wave Resonator on Nonflat SiO2/Al/LiNbO3 Structure
- Miniature Surface Acoustic Wave Duplexer Using SiO2/Al/LiNbO3 Structure for Wide-Band Code-Division Multiple-Access System
- Zero temperature coefficient of frequency surface acoustic wave resonator for narrow-duplex-gap application on SiO2/Al/LiNbO3 structure (Special issue: Ultrasonic electronics)
- Study of relationship between layer profile of SiO2 and characteristics of surface acoustic wave devices in SiO2/Al/LiTaO3 system (Special issue: Ultrasonic electronics)
- Miniature Surface Acoustic Wave Duplexer with Wide Duplex Gap on SiO2/Al/LiNbO3 Structure
- Transverse-Mode Spurious Suppression Technique for Surface Acoustic Wave Resonator with Zero Temperature Coefficient of Frequency on a SiO2/Al/LiNbO3 Structure
- Study of Relationship between Cut Angle of Substrate and Characteristics of Surface Acoustic Wave Resonators with Shape-Controlled SiO2