High-Electromechanical-Coupling-Coefficient Surface Acoustic Wave Resonator on Ta2O5/Al/LiNbO3 Structure
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概要
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In this paper, we describe a high-electromechanical-coupling-coefficient ($K^{2}$) surface acoustic wave (SAW) resonator on a Ta2O5/Al/LiNbO3 structure for wide duplex gap applications. We analyzed the responses of a SAW resonator on a Ta2O5/Al/LiNbO3 structure by finite element method (FEM)/spectrum domain analysis (SDA). We have clarified that the optimum Ta2O5 thickness at which the high-performance SAW resonator without the Rayleigh-mode spurious response could be realized. The results of the simulation were in good agreement with those of the experiment. Also, the Ta2O5 film has the advantage of decreasing the film thickness over the SiO2 film. The developed SAW resonator shows excellent characteristics, namely, a low insertion loss and a high $K^{2}$ of 23%. By applying the SAW resonator in the filters, a ladder-type filter and a longitudinally-coupled double-mode SAW (DMS) filter with a low insertion loss and a large bandwidth were realized. We have therefore shown the feasibility of applying devices with a wide duplex gap such as Band I, IV, and X duplexers and a wide pass-band filter using the Ta2O5/Al/5°YX-LiNbO3 structure.
- 2010-07-25
著者
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Nakanishi Hidekazu
Panasonic Electronic Devices Co., Ltd., Kadoma, Osaka 571-8506, Japan
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Goto Rei
Panasonic Electronic Devices Co., Ltd., Kadoma, Osaka 571-8506, Japan
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Nakamura Hiroyuki
Panasonic Electronic Devices Co., Ltd., Kadoma, Osaka 571-8506, Japan
関連論文
- High-Electromechanical-Coupling-Coefficient Surface Acoustic Wave Resonator on Ta2O5/Al/LiNbO3 Structure
- Analysis of Rayleigh-Mode Spurious Response Using Finite Element Method/Spectrum Domain Analysis for Surface Acoustic Wave Resonator on Nonflat SiO2/Al/LiNbO3 Structure
- Miniature Surface Acoustic Wave Duplexer Using SiO2/Al/LiNbO3 Structure for Wide-Band Code-Division Multiple-Access System
- Zero temperature coefficient of frequency surface acoustic wave resonator for narrow-duplex-gap application on SiO2/Al/LiNbO3 structure (Special issue: Ultrasonic electronics)
- Study of relationship between layer profile of SiO2 and characteristics of surface acoustic wave devices in SiO2/Al/LiTaO3 system (Special issue: Ultrasonic electronics)
- Miniature Surface Acoustic Wave Duplexer with Wide Duplex Gap on SiO2/Al/LiNbO3 Structure
- Transverse-Mode Spurious Suppression Technique for Surface Acoustic Wave Resonator with Zero Temperature Coefficient of Frequency on a SiO2/Al/LiNbO3 Structure
- Study of Relationship between Cut Angle of Substrate and Characteristics of Surface Acoustic Wave Resonators with Shape-Controlled SiO2