Nakamura Hiroyuki | Panasonic Electronic Devices Co., Ltd., Kadoma, Osaka 571-8506, Japan
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概要
- Nakamura Hiroyukiの詳細を見る
- 同名の論文著者
- Panasonic Electronic Devices Co., Ltd., Kadoma, Osaka 571-8506, Japanの論文著者
関連著者
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Nakanishi Hidekazu
Panasonic Electronic Devices Co., Ltd., Kadoma, Osaka 571-8506, Japan
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Nakamura Hiroyuki
Panasonic Electronic Devices Co., Ltd., Kadoma, Osaka 571-8506, Japan
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Hashimoto Ken-ya
Graduate School Of Engineering Chiba University
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Goto Rei
Panasonic Electronic Devices Co., Ltd., Kadoma, Osaka 571-8506, Japan
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Tsurunari Tetsuya
Panasonic Electronic Devices Co., Ltd., Kadoma, Osaka 571-8506, Japan
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Hamaoka Yosuke
Panasonic Electronic Devices Co., Ltd., Kadoma, Osaka 571-8506, Japan
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Iwasaki Yukio
Panasonic Electronic Devices Co., Ltd., Kadoma, Osaka 571-8506, Japan
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Yamaguchi Masatsune
Graduate School of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
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Fujiwara Joji
Panasonic Electronic Devices Co., Ltd., Kadoma, Osaka 571-8506, Japan
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Kamiguchi Hiroki
Panasonic Electronic Devices Co., Ltd., Kadoma, Osaka 571-8506, Japan
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Takayama Ryoichi
Panasonic Electronic Devices Co., Ltd., Kadoma, Osaka 571-8506, Japan
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Yamaguchi Masatsune
Graduate School of Engineering, Chiba University, Chiba 263-8522, Japan
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Hashimoto Ken-ya
Graduate School of Engineering, Chiba University, Inage, Chiba 263-8522, Japan
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Matsunami Ken
Panasonic Electronic Devices Co., Ltd., Kadoma, Osaka 571-8506, Japan
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Yamaguchi Masatsune
Graduate School of Engineering, Chiba University, Inage, Chiba 263-8522, Japan
著作論文
- High-Electromechanical-Coupling-Coefficient Surface Acoustic Wave Resonator on Ta2O5/Al/LiNbO3 Structure
- Analysis of Rayleigh-Mode Spurious Response Using Finite Element Method/Spectrum Domain Analysis for Surface Acoustic Wave Resonator on Nonflat SiO2/Al/LiNbO3 Structure
- Miniature Surface Acoustic Wave Duplexer Using SiO2/Al/LiNbO3 Structure for Wide-Band Code-Division Multiple-Access System
- Zero temperature coefficient of frequency surface acoustic wave resonator for narrow-duplex-gap application on SiO2/Al/LiNbO3 structure (Special issue: Ultrasonic electronics)
- Study of relationship between layer profile of SiO2 and characteristics of surface acoustic wave devices in SiO2/Al/LiTaO3 system (Special issue: Ultrasonic electronics)
- Miniature Surface Acoustic Wave Duplexer with Wide Duplex Gap on SiO2/Al/LiNbO3 Structure
- Transverse-Mode Spurious Suppression Technique for Surface Acoustic Wave Resonator with Zero Temperature Coefficient of Frequency on a SiO2/Al/LiNbO3 Structure