Characteristics of La2O3- and Al2O3-capped HfO2 dielectric metal-oxide-semiconductor field-effect transistors fabricated on (110)-oriented silicon substrates
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Iijima Ryosuke
Toshiba America Electronic Components, Inc., 257 Fuller Road, Albany, NY 12203, U.S.A.
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Takayanagi Mariko
Toshiba America Electronic Components, Inc., 257 Fuller Road, Albany, NY 12203, U.S.A.
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Edge Lisa
IBM Research at Albany Nanotech, 257 Fuller Road, Albany, NY 12203, U.S.A.
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Bruley John
IBM TJ Watson Research Center, 1101 Kitchawan Road, Route 134, Yorktown Heights, NY 10598, U.S.A.
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Paruchuri Vamsi
IBM Research at Albany Nanotech, 257 Fuller Road, Albany, NY 12203, U.S.A.
関連論文
- Characteristics of La2O3- and Al2O3-capped HfO2 dielectric metal-oxide-semiconductor field-effect transistors fabricated on (110)-oriented silicon substrates
- Electron Mobility Limited by Remote Charge Scattering in Thin (100)- and (110)-Oriented Silicon Body Double-Gated Metal-Oxide-Semiconductor Field-Effect Transistors with High-k Gate Dielectrics
- Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-k/Metal Gate Metal--Oxide--Semiconductor Field-Effect Transistors
- Physical Mechanism of Threshold Voltage Modulation by Ge Channel Ion Implantation in the TiN/HfO2 Gate Stack Systems