Physical Mechanism of Threshold Voltage Modulation by Ge Channel Ion Implantation in the TiN/HfO2 Gate Stack Systems

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概要

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• We extensively investigated the physical origin of the threshold voltage V_{\text{TH}} modulation by the Ge channel ion implantation (I/I) in HfO2/TiN/polycrystalline Si gate stack systems. The possible V_{\text{TH}} modulation factors were carefully distinguished from each other by changing the channel dopant concentration and the thickness of the gate dielectric films. It was found that the changes in energy-band offset and dopant concentration in the channel region are minor factors of the V_{\text{TH}} modulation. However, it was also found that \Delta V_{\text{TH}} is sensitive to the oxidation condition of the interfacial oxide layer; a longer oxidation induces a larger \Delta V_{\text{TH}}. From the X-ray spectroscopy, we found that a Ge pile-up at the interfacial layer/channel interface occurs, and that the V_{\text{TH}} modulation range correlates well with the amount of piled-up Ge.

• 2011-06-25

著者

• Tai Leo

  IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, NY 12533, U.S.A.

• Tsuchiya Yoshinori

  Toshiba America Electronic Components, Inc., 257 Fuller Road, Albany, NY 12203, U.S.A.

• Iijima Ryosuke

  Toshiba America Electronic Components, Inc., 257 Fuller Road, Albany, NY 12203, U.S.A.

• Takayanagi Mariko

  Toshiba America Electronic Components, Inc., 257 Fuller Road, Albany, NY 12203, U.S.A.

• Paruchuri Vamsi

  IBM Research at Albany Nanotech, 257 Fuller Road, Albany, NY 12203, U.S.A.

• Berliner Nathaniel

  IBM Research at Albany Nanotech, 257 Fuller Road, Albany, NY 12203, U.S.A.

関連論文

• Characteristics of La2O3- and Al2O3-capped HfO2 dielectric metal-oxide-semiconductor field-effect transistors fabricated on (110)-oriented silicon substrates
• Electron Mobility Limited by Remote Charge Scattering in Thin (100)- and (110)-Oriented Silicon Body Double-Gated Metal-Oxide-Semiconductor Field-Effect Transistors with High-k Gate Dielectrics
• Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-k/Metal Gate Metal--Oxide--Semiconductor Field-Effect Transistors
• Physical Mechanism of Threshold Voltage Modulation by Ge Channel Ion Implantation in the TiN/HfO2 Gate Stack Systems

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